FMC in Germany appoints former Intel executive Daniel Artusi to board of directors
German startup Ferroelectric Memory (FMC) has appointed a senior Intel executive to its board of directors.
The company, established in 2016, is developing ferroelectric hafnium oxide technology for ultra-low power memory devices and has appointed Daniel Artusi to the board.
Artusi most recently served as vice president in the Client Computing Group and general manager for the Connected Home division at Intel. Prior to Intel, he was CEO of Lantiq Deutschland GmbH, a fabless semiconductor company, which was acquired by Intel in 2015.
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”Daniel brings a wealth of industry experience to our board,” said Ali Pourkeramati, CEO of FMC. “His extensive strategy and leadership experience in the semiconductor industry will benefit FMC as we accelerate commercialization of our leading-edge ferroelectric memory.”
He also has key experience with funding as an operating executive with Golden Gate Capital, a private equity firm. FMC last year raised over $25m in two rounds of funding.
Artusi prevously worked at Conexant Systems, Coldwatt, a provider of high efficiency power supplies for the communications and computer industry, Silicon Laboratories and Motorola. He also currently serves on the board of directors of MaxLinear and Minim and on the boards of privately held technology companies GenXComm and VisIC-Tech, as well as on the Engineering Advisory Board of the Cockrell School of Engineering at the University of Texas at Austin.
“I look forward to working with Ali and the rest of the FMC team,” said Artusi. “FMC has developed a unique and patented technology for transforming amorphous HfO2 into crystalline ferroelectric HfO2, which can offer superior performance compared with state-of-the-art and emerging memory solutions. This technology will bring significant benefits to applications such as AI and 5G, Big Data, which require high-performance and low power consumption as well compatibility with leading-edge CMOS logic processes.”
The ferroelectric hafnium oxide field-effect transistor (FeFET) and capacitor (FeCAP) technology is simple to integrate, fast, low-power, and scalable, and has high endurance with decades of data retention, suitable for a broad range of AI, IoT, edge, data center, and embedded applications.
www.ferroelectric-memory.com
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Source:: E.E.Newseurope
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